发明授权
- 专利标题： Wafer scribing method and wafer scribing device
- 专利标题（中）： 晶圆划片方法和晶圆划线装置
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申请号： US10016633申请日： 2001-10-30
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公开(公告)号： US06914006B2公开(公告)日： 2005-07-05
- 发明人: Martin Peiter , Eckhard Marx , Karl E. Mautz
- 申请人： Martin Peiter , Eckhard Marx , Karl E. Mautz
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 James L. Clingan, Jr.
- 主分类号： B23K26/38
- IPC分类号： B23K26/38 ; H01L21/00 ; H01L21/301 ; H01L21/304 ; H01L23/544 ; H01L21/302
摘要：
The present invention relates to a scribing method for wafers (11), wherein a defined beam (12) is directed onto the wafer (11) by means of a beam generator means (10) so as to remove some wafer material from a wafer region. The invention also relates to a wafer-scribing device including a wafer mount (31) and a beam generator means (10) by means of which at least one defined beam can be directed onto the wafer (11).The inventive method is distinguished by the by the further step of generating a first radiation pulse having a predeterminable energy density and used to create a comparatively deep pit (18) in the wafer (11).The inventive wafer scribing means is distinguished by the provision that a radiation pulse can be generated by means of which a comparatively deep pit (18) can be created in the wafer (11).
公开/授权文献
- US20030109141A1 Wafer scribing method and wafer scribing device 公开/授权日：2003-06-12
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