Invention Grant
- Patent Title: Langmuir-blodgett chemically amplified photoresist
- Patent Title (中): Langmuir-blodgett化学放大光刻胶
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Application No.: US10695103Application Date: 2003-10-28
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Publication No.: US06864192B1Publication Date: 2005-03-08
- Inventor: Huey-Chiang Liou , Hai Deng , Wang Yueh , Hok-Kin Choi
- Applicant: Huey-Chiang Liou , Hai Deng , Wang Yueh , Hok-Kin Choi
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/16 ; H01L21/31
Abstract:
A Langmuir-Blodgett film may be utilized as a chemically amplified photoresist layer. Langmuir-Blodgett films have highly vertically oriented structures which may be effective in reducing line edge or line width roughness in chemically amplified photoresists.
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