发明授权
- 专利标题: CMOS inverter
- 专利标题(中): CMOS逆变器
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申请号: US10094824申请日: 2002-03-11
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公开(公告)号: US06794905B2公开(公告)日: 2004-09-21
- 发明人: Masatoshi Sato , Masayoshi Isobe
- 申请人: Masatoshi Sato , Masayoshi Isobe
- 优先权: JP2001-093620 20010328
- 主分类号: H03K19084
- IPC分类号: H03K19084
摘要:
A CMOS inverter capable of operating at low voltages is provided. The gate of a p-channel MOS transistor and the gate of an n-channel MOS transistor are AC coupled to an input terminal via first and second capacitors, respectively. Signals whose amplitude centers are optimized according to the threshold voltages of the p- and n-channel MOS transistors by bias voltages from first and second variable voltage sources, respectively, are supplied to the gates of these MOS transistors. In consequence, the CMOS inverter can operate at high speeds at low power supply voltages without being affected by the threshold voltages.
公开/授权文献
- US20020140458A1 CMOS inverter 公开/授权日:2002-10-03
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