发明授权
US06794198B1 MOCVD selective deposition of c-axis oriented Pb5Ge3O11 thin films on high-k gate oxides
失效
在高k栅极氧化物上的c轴取向Pb5Ge3O11薄膜的MOCVD选择性沉积
- 专利标题： MOCVD selective deposition of c-axis oriented Pb5Ge3O11 thin films on high-k gate oxides
- 专利标题（中）： 在高k栅极氧化物上的c轴取向Pb5Ge3O11薄膜的MOCVD选择性沉积
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申请号： US10606057申请日： 2003-06-25
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公开(公告)号： US06794198B1公开(公告)日： 2004-09-21
- 发明人: Tingkai Li , Sheng Teng Hsu , David R. Evans , Bruce D. Ulrich
- 申请人： Tingkai Li , Sheng Teng Hsu , David R. Evans , Bruce D. Ulrich
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A method of forming a PGO thin film on a high-k dielectric includes preparing a silicon substrate, including forming a high-k gate oxide layer thereon; patterning the high-k gate oxide; annealing the substrate in a first annealing step; placing the substrate in a MOCVD chamber; depositing a PGO thin film by injecting a PGO precursor into the MOCVD chamber; and annealing the structure having a PGO thin film on a high-k gate oxide in a second annealing step.
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