发明授权
US06707749B2 Enabling an interim density for top boot flash memories 失效
启用顶级启动闪存的临时密度

  • 专利标题: Enabling an interim density for top boot flash memories
  • 专利标题(中): 启用顶级启动闪存的临时密度
  • 申请号: US10218955
    申请日: 2002-08-14
  • 公开(公告)号: US06707749B2
    公开(公告)日: 2004-03-16
  • 发明人: Quan H. NgoSaad Monasa
  • 申请人: Quan H. NgoSaad Monasa
  • 主分类号: G11C800
  • IPC分类号: G11C800
Enabling an interim density for top boot flash memories
摘要:
An interim density top boot flash memory architecture may be implemented by locking a portion or block of memory to prevent memory read and write accesses, thereby reducing the overall capacity of the memory. At the same time, this may be done without interfering with the access to parameters needed for implementing booting. In some embodiments, the locked memory may be placed at a block above the lowest addressable block that is accessed by an internal address.
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