发明授权
- 专利标题: Enabling an interim density for top boot flash memories
- 专利标题(中): 启用顶级启动闪存的临时密度
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申请号: US10218955申请日: 2002-08-14
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公开(公告)号: US06707749B2公开(公告)日: 2004-03-16
- 发明人: Quan H. Ngo , Saad Monasa
- 申请人: Quan H. Ngo , Saad Monasa
- 主分类号: G11C800
- IPC分类号: G11C800
摘要:
An interim density top boot flash memory architecture may be implemented by locking a portion or block of memory to prevent memory read and write accesses, thereby reducing the overall capacity of the memory. At the same time, this may be done without interfering with the access to parameters needed for implementing booting. In some embodiments, the locked memory may be placed at a block above the lowest addressable block that is accessed by an internal address.
公开/授权文献
- US20040032789A1 ENABLING AN INTERIM DENSITY FOR TOP BOOT FLASH MEMORIES 公开/授权日:2004-02-19
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