Invention Grant
- Patent Title: Semiconductor dynamic quantity sensor
- Patent Title (中): 半导体动量传感器
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Application No.: US10053705Application Date: 2002-01-24
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Publication No.: US06658948B2Publication Date: 2003-12-09
- Inventor: Shinji Yoshihara , Yasutoshi Suzuki
- Applicant: Shinji Yoshihara , Yasutoshi Suzuki
- Priority: JP2001-024187 20010131; JP2001-113078 20010411; JP2001-221697 20010723
- Main IPC: G01L122
- IPC: G01L122

Abstract:
A bridge circuit includes four gage resistors. Each gage resistor is divided into two division gage resistors. A couple of division gage resistors. The junction points between division gage resistors outputting the same potential when no pressure is applied are used for diagnostic. Four gage resistors out of the eight gage resistors are arranged near the center of diaphragm 14, and the other four division resistors are arranged near the peripheral edge portion of the diaphragm 14 to make the stress distribution even.
Public/Granted literature
- US20020100948A1 Semiconductor dynamic quantity sensor Public/Granted day:2002-08-01
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