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US06621666B2 Magnetoresistive-effect element having electrode layers oppositely disposed on main surfaces of a magnetoresistive-effect thin film having hard magnetic bias layers with a particular resistivity 失效
磁阻效应元件具有相对设置在具有特定电阻率的硬磁偏置层的磁阻效应薄膜的主表面上的电极层

  • 专利标题： Magnetoresistive-effect element having electrode layers oppositely disposed on main surfaces of a magnetoresistive-effect thin film having hard magnetic bias layers with a particular resistivity
  • 专利标题（中）： 磁阻效应元件具有相对设置在具有特定电阻率的硬磁偏置层的磁阻效应薄膜的主表面上的电极层
  • 申请号： US09794003
    申请日： 2001-02-28
  • 公开(公告)号： US06621666B2
    公开(公告)日： 2003-09-16
  • 发明人: Teiichi Miyauchi , Hiroshi Kano , Tetsuya Mizuguchi , Minoru Ikarashi
  • 申请人： Teiichi Miyauchi , Hiroshi Kano , Tetsuya Mizuguchi , Minoru Ikarashi
  • 优先权： JPP2000-061873 20000302
  • 主分类号： G11B539
  • IPC分类号： G11B539
Magnetoresistive-effect element having electrode layers oppositely disposed on main surfaces of a magnetoresistive-effect thin film having hard magnetic bias layers with a particular resistivity
摘要：
A first ferromagnetic layer is made to show a single magnetic domain to prevent any magnetic walls from appearing. A pair of bias layers 4 are made of a hard magnetic material showing a high resistivity are arranged at opposite ends of a TMR thin film 3. As a result, the sense current flowing through the TMR thin film 3 is prevented from diverting to the bias layers 4. Thus, a sufficiently strong bias magnetic field can be applied to the TMR thin film 3. As a result, the free layer 13 of the TMR thin film 3 is made to show a single magnetic domain to prevent any magnetic walls from appearing.
摘要（中）：

制造第一铁磁层以示出单个磁畴，以防止出现任何磁性壁。 在TMR薄膜3的相对端设有由电阻率高的硬磁性材料构成的一对偏压层4，结果，防止流过TMR薄膜3的感测电流转向偏压 因此，可以对TMR薄膜3施加足够强的偏置磁场。结果，使TMR薄膜3的自由层13显示单个磁畴，以防止任何磁性壁出现 。

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