发明授权
US06613621B2 Methods of forming self-aligned contact pads using a damascene gate process
有权
使用镶嵌门工艺形成自对准接触垫的方法
- 专利标题： Methods of forming self-aligned contact pads using a damascene gate process
- 专利标题（中）： 使用镶嵌门工艺形成自对准接触垫的方法
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申请号： US09803244申请日： 2001-03-09
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公开(公告)号： US06613621B2公开(公告)日： 2003-09-02
- 发明人: Hyung-Soo Uh , Kyu-Hynn Lee , Tae-Young Chung , Ki-Nam Kim , Yoo-Sang Hwang
- 申请人： Hyung-Soo Uh , Kyu-Hynn Lee , Tae-Young Chung , Ki-Nam Kim , Yoo-Sang Hwang
- 优先权： KR2000-11821 20000309; KR2000-55794 20000922
- 主分类号： H01L21338
- IPC分类号： H01L21338
摘要：
Self-aligned contacts in integrated circuits can be formed on an integrated circuit substrate having an active region. A groove can be formed in the insulating layer and a conductive material can be formed in the groove to a level that is recessed in the groove. An insulating material can be formed in the groove on the conductive material that has an etch selectivity with respect to the insulating layer. A contact that is self-aligned to the active region can be then be formed.
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