Invention Grant
US06583458B1 Semiconductor integrated circuit including a DRAM and an analog circuit
有权
包括DRAM和模拟电路的半导体集成电路
- Patent Title: Semiconductor integrated circuit including a DRAM and an analog circuit
- Patent Title (中): 包括DRAM和模拟电路的半导体集成电路
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Application No.: US09397502Application Date: 1999-09-17
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Publication No.: US06583458B1Publication Date: 2003-06-24
- Inventor: Masao Hayashi , Taiji Ema , Narumi Ohkawa
- Applicant: Masao Hayashi , Taiji Ema , Narumi Ohkawa
- Priority: JP10-292516 19981014; JP11-042291 19990219
- Main IPC: H01L2968
- IPC: H01L2968
Abstract:
A semiconductor device includes an interlayer insulation film formed on a substrate so as to cover first and second regions defined on the substrate, and a capacitor formed over the interlayer insulation film in the first region, wherein the interlayer insulation film includes, in the first region, a stepped part defined by a groove having a bottom surface lower in level than a surface of the interlayer insulation film in the second region.
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