The invention provides SRAMs that can reduce memory cells in size and correct light proximity effect. Gate electrode layers in a first layer, drain—drain connection layers in a second layer, and drain-gate connection layers in a third layer define conduction layers of a flip-flop. The drain-gate connection layer has an extension section extending in a direction toward the drain-gate connection layer. The drain-gate connection layer 41b has an extension section extending in a direction toward the drain-gate connection layer.