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US06551854B2 Semiconductor device having bump electrodes and method of manufacturing the same 有权
具有凸块电极的半导体器件及其制造方法

  • Patent Title: Semiconductor device having bump electrodes and method of manufacturing the same
  • Patent Title (中): 具有凸块电极的半导体器件及其制造方法
  • Application No.: US09813160
    Application Date: 2001-03-21
  • Publication No.: US06551854B2
    Publication Date: 2003-04-22
  • Inventor: Eiichi Hosomi , Yasuhiro Koshio
  • Applicant: Eiichi Hosomi , Yasuhiro Koshio
  • Priority: JP2000-088452 20000328
  • Main IPC: H01L2144
  • IPC: H01L2144
Semiconductor device having bump electrodes and method of manufacturing the same
Abstract:
A semiconductor device includes a bonding layer which consists of an intermetallic compound and is positioned between a first electrode and a bump electrode. The bump electrode is mainly made of Au. The intermetallic compound of the bonding layer consist of Au of the bump electrode and a low melting metal.
Abstract(Chinese):

半导体器件包括由金属间化合物组成并且位于第一电极和凸块电极之间的接合层。 凸块电极主要由Au制成。 接合层的金属间化合物由凸起电极的Au和低熔点金属组成。

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