发明授权
- 专利标题： Memory cell of nonvolatile semiconductor memory device
- 专利标题（中）： 非易失性半导体存储器件的存储单元
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申请号： US09699632申请日： 2000-10-31
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公开(公告)号： US06549462B1公开(公告)日： 2003-04-15
- 发明人: Hiroshi Iwahashi
- 申请人： Hiroshi Iwahashi
- 优先权： JP62-161625 19870629; JP62-163023 19870630; JP62-325686 19871223
- 主分类号： G11C1604
- IPC分类号： G11C1604
摘要：
The current paths of a plurality of floating gate type MOSFETs are series-connected to form a series circuit. The series circuit is connected at one end to receive a reference voltage, and is connected to data programming and readout circuit. In the data programming mode, electrons are discharged from the floating gate to the drain of the MOSFET or holes are injected into the drain into the floating gate. The data readout operation is effected by checking whether current flows from the other end to the one end of the series circuit or not.
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