发明授权
US06528858B1 MOSFETs with differing gate dielectrics and method of formation
有权
具有不同栅极电介质的MOSFET和形成方法
- 专利标题： MOSFETs with differing gate dielectrics and method of formation
- 专利标题（中）： 具有不同栅极电介质的MOSFET和形成方法
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申请号： US10044892申请日： 2002-01-11
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公开(公告)号： US06528858B1公开(公告)日： 2003-03-04
- 发明人: Bin Yu , Qi Xiang , Olov Karlsson , HaiHong Wang , Zoran Krivokapic
- 申请人： Bin Yu , Qi Xiang , Olov Karlsson , HaiHong Wang , Zoran Krivokapic
- 主分类号： H01L2902
- IPC分类号： H01L2902
摘要：
A semiconductor wafer including an NMOS device and a PMOS device. The NMOS device is formed to have a high-K gate dielectric and the PMOS device is formed to have a standard-K gate dielectric. A method of forming the NMOS device and the PMOS device is also disclosed.
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