Invention Grant
US06496441B2 Semiconductor memory device with improved data propagation characteristics of a data bus
有权
具有改善的数据总线的数据传播特性的半导体存储器件
- Patent Title: Semiconductor memory device with improved data propagation characteristics of a data bus
- Patent Title (中): 具有改善的数据总线的数据传播特性的半导体存储器件
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Application No.: US09907743Application Date: 2001-07-19
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Publication No.: US06496441B2Publication Date: 2002-12-17
- Inventor: Takashi Kono , Tetsuo Kato
- Applicant: Takashi Kono , Tetsuo Kato
- Priority: JP2001-029215 20010206
- Main IPC: G11C800
- IPC: G11C800

Abstract:
By devising the arrangement of memory arrays surrounding the central region of the chip, the total length of a data bus can be reduced. The memory arrays are arranged such that one of two memory arrays that are located at the positions point-symmetric with respect to the central region corresponds to lower DQ terminals, and the other memory array corresponds to upper DQ terminals. Preferably, the memory arrays corresponding to the upper DQ terminals and the memory arrays corresponding to the lower DQ terminals are each located collectively. Thus, a semiconductor memory device with improved data propagation characteristics on the data bus can be provided.
Public/Granted literature
- US20020105849A1 Semiconductor memory device with improved data propagation characteristics of a data bus Public/Granted day:2002-08-08
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