发明授权
- 专利标题: Precise control of VCE in close to saturation conditions
- 专利标题(中): VCE在饱和条件下的精确控制
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申请号: US09817292申请日: 2001-03-27
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公开(公告)号: US06476661B2公开(公告)日: 2002-11-05
- 发明人: Stepan Iliasevitch
- 申请人: Stepan Iliasevitch
- 优先权: CA2302900 20000329
- 主分类号: H03K1704
- IPC分类号: H03K1704
摘要:
A pull-down circuit uses an npn transistor operating at close to saturation and the collector/emitter voltage is used as the pull-down voltage. To keep this within strict limits the npn transistor is connected in circuit with other transistors and resistors as well as a current source that generates a current proportional to absolute temperature. By selecting the values of the resistors and transistor parameters the collector/emitter voltage may be kept stable within a small range over wide temperature variation.
公开/授权文献
- US20010043110A1 Precise control of VCE in close to saturaion conditions 公开/授权日:2001-11-22
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