Invention Grant
US06365513B1 Method of making a semiconductor device including testing before thinning the semiconductor substrate
有权
制造半导体器件的方法包括在稀薄半导体衬底之前的测试
- Patent Title: Method of making a semiconductor device including testing before thinning the semiconductor substrate
- Patent Title (中): 制造半导体器件的方法包括在稀薄半导体衬底之前的测试
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Application No.: US09162232Application Date: 1998-09-29
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Publication No.: US06365513B1Publication Date: 2002-04-02
- Inventor: Hidetoshi Furukawa , Atsushi Noma , Tsuyoshi Tanaka , Hidetoshi Ishida , Daisuke Ueda
- Applicant: Hidetoshi Furukawa , Atsushi Noma , Tsuyoshi Tanaka , Hidetoshi Ishida , Daisuke Ueda
- Priority: JP9-268486 19971001; JP10-183765 19980630
- Main IPC: H01L2166
- IPC: H01L2166
Abstract:
A via hole having a bottom is formed in a substrate and then a conductor layer is formed at least over a sidewall of the via hole. Thereafter, the substrate is thinned by removing a portion of the substrate opposite to another portion of the substrate in which the via hole is formed such that the conductor layer is exposed.
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