A process for forming an ultra-shallow junction depth, doped region within a silicon substrate. The process includes forming a dielectric film on the substrate, then implanting an ionic dopant species into the structure. The profile of the implanted species includes a population implanted through the dielectric film and into the silicon substrate, and a peak concentration deliberately confined in the dielectric film in close proximity to the interface between the dielectric film and the silicon substrate. A high-energy, low-dosage implant process is used and produces a structure that is substantially free of dislocation loops and other defect clusters. An annealing process is used to drive the peak concentration closer to the interface, and some of the population of the originally implanted species from the dielectric film into the silicon substrate. A low thermal budget is maintained because of the proximity of the as-implanted peak concentration to the interface and the presence of species implanted through the dielectric film and into the substrate.