Invention Grant
- Patent Title: Repair process for aluminum nitride substrates
- Patent Title (中): 氮化铝基板的修复工艺
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Application No.: US09211595Application Date: 1998-12-14
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Publication No.: US06262390B1Publication Date: 2001-07-17
- Inventor: David B. Goland , Mark J. LaPlante , David C. Long , Dale C. McHerron , Krishna G. Sachdev , Subhash L. Shinde
- Applicant: David B. Goland , Mark J. LaPlante , David C. Long , Dale C. McHerron , Krishna G. Sachdev , Subhash L. Shinde
- Main IPC: B23K2600
- IPC: B23K2600
Abstract:
A method to repair Aluminum Nitride (AlN) substrates is disclosed wherein a frequency doubled Q-switched Nd:YAG laser is used to remove unwanted metallurgy. The substrate is place in a liquid filled work chamber which acts to prevent metallic species of AlN from forming. The repair site can be sealed with a novel polymer coating to prevent contamination or corrosion. Repairs can be made to buried or surface metallurgy.
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