发明授权
- 专利标题: Semiconductor wafer testing method with probe pin contact
- 专利标题(中): 半导体晶圆测试方法与探针接触
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申请号: US30349申请日: 1998-02-25
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公开(公告)号: US6063640A公开(公告)日: 2000-05-16
- 发明人: Masataka Mizukoshi , Hidehiko Akasaki , Masao Nakano , Yasuhiro Fujii , Shinnosuke Kamata , Makoto Yanagisawa , Yasurou Matsuzaki , Toyonobu Yamada , Masami Matsuoka , Hiroyoshi Tomita
- 申请人: Masataka Mizukoshi , Hidehiko Akasaki , Masao Nakano , Yasuhiro Fujii , Shinnosuke Kamata , Makoto Yanagisawa , Yasurou Matsuzaki , Toyonobu Yamada , Masami Matsuoka , Hiroyoshi Tomita
- 申请人地址: JPX Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX9-065117 19970318; JPX9-155287 19970612; JPX9-172121 19970627; JPX9-196100 19970722
- 主分类号: H01L23/58
- IPC分类号: H01L23/58 ; G01R31/26 ; H01L21/66
摘要:
A semiconductor wafer testing method includes a pre-test step for forming a temporary test film on a surface of a semiconductor wafer, a test step for testing the semiconductor wafer by applying a probe to the temporary test film and a post-test step for exfoliating the temporary test film from the surface of the semiconductor wafer. The temporary test film includes test electrode groups each provided with a plurality of regularly arranged test electrodes, and wiring patterns for electrically connecting the test electrodes with corresponding ones of semiconductor unit electrodes in respective semiconductor units on the semiconductor wafer. Probe pins of said probe are arranged so as to be aligned with corresponding ones of the test electrodes of the respective test electrode groups.
公开/授权文献
- US4836678A Double-path interferometer 公开/授权日:1989-06-06
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