发明授权
US6002631A Semiconductor memory device having a mode in which a plurality of data are simultaneously read out of memory cells of one row and different columns 失效
具有从一行和不同列的存储单元中同时读出多个数据的模式的半导体存储器件

Semiconductor memory device having a mode in which a plurality of data
are simultaneously read out of memory cells of one row and different
columns
摘要:
Even-numbered columns are arranged in the first memory cell array (bank), and odd-numbered columns are arranged in the second memory cell array (bank). A column address signal is input to an adder through a buffer. When data is read out of two or more columns, the adder generates a column address signal whose address value is more than that of the column address signal by one. The adder supplies a first column decoder with a column address signal for addressing an even-numbered column and supplies a second column decoder with a column address signal for addressing an odd-numbered column. Since the even-numbered columns and odd-numbered columns are arranged in their separate memory cell arrays, data read out of continuous two or more columns do not collide with each other.
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