发明授权
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
-
申请号: US25860申请日: 1998-02-19
-
公开(公告)号: US5995430A公开(公告)日: 1999-11-30
- 发明人: Tomoaki Yabe
- 申请人: Tomoaki Yabe
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX9-037630 19970221
- 主分类号: G11C11/409
- IPC分类号: G11C11/409 ; G11C7/10 ; G11C11/407 ; G11C11/4096 ; G11C7/00 ; G11C8/00
摘要:
An overlaid DQ type DRAM of a clock synchronous type is provided with a column address transition detector circuit, to control pre-charging and equalizing of pairs of DQ lines. An address for selecting a DQ line muptiplexer in a stage prior to a DQ buffer is set to a predetermined column address, and a transition of a column address is detected in a first pipeline stage of a column access path. When only the bit of the predetermined column address changes with the other column address bits kept unchanged, DQ lines are pre-charged and equalized.
公开/授权文献
- USD365891S Bathing mitt 公开/授权日:1996-01-02
信息查询
IPC分类: