发明授权
US5982688A Circuit and method for controlling bit line for a semiconductor memory
device
失效
用于控制半导体存储器件的位线的电路和方法
- 专利标题: Circuit and method for controlling bit line for a semiconductor memory device
- 专利标题(中): 用于控制半导体存储器件的位线的电路和方法
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申请号: US996918申请日: 1997-12-23
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公开(公告)号: US5982688A公开(公告)日: 1999-11-09
- 发明人: Yong-joo Han
- 申请人: Yong-joo Han
- 申请人地址: KRX Suwon
- 专利权人: Samsung Electronics, Co., Ltd.
- 当前专利权人: Samsung Electronics, Co., Ltd.
- 当前专利权人地址: KRX Suwon
- 优先权: KRX97-2881 19970130
- 主分类号: G11C11/409
- IPC分类号: G11C11/409 ; G11C7/12 ; G11C11/407 ; G11C11/4094 ; G11C7/00
摘要:
A first precharge circuit precharges a bit line to an equalization voltage during precharging operations and is disabled during charge sharing operations floating the bit line. A second precharge circuit precharges a bit line bar to an equalization voltage during precharging and charge sharing operations. Since the bit line is floated during charge sharing operations, and the bit line bar is continually precharged to an equalization voltage level, variation of the bit line bar voltage level due to a charge coupling between the bit line and the bit line bar during charge sharing is prevented. The difference in a level between the bit line and the bit line bar after the charge sharing can be detected by a sense and amplification circuit.
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