Invention Grant
- Patent Title: Dual damascene structure and its manufacturing method
- Patent Title (中): 双镶嵌结构及其制造方法
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Application No.: US113879Application Date: 1998-07-10
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Publication No.: US5933761APublication Date: 1999-08-03
- Inventor: Ellis Lee
- Applicant: Ellis Lee
- Assignee: Lee; Ellis
- Current Assignee: Lee; Ellis
- Priority: TWX87101688 19980209
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L21/311 ; H01L21/768 ; H01L23/522 ; H01L21/477
Abstract:
The present invention relates to a dual damascene structure and its manufacturing method. The invention uses two implanting step to form two stop layers. It uses the stop layers to perform an anisotropic etching step so as to form a via and trench. Finally, a conductive layer is filled into the via and trench followed by the completion of forming of the dual damascene structure. The invention controls the etching stop. Another advantage of the present invention is that of using the spacer as the trench mask instead of the multi-mask. Therefore, misalignment is prevented in the present invention.
Public/Granted literature
- US5376200A Method for manufacturing an integral threaded connection for a composite tank Public/Granted day:1994-12-27
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