发明授权
- 专利标题： Method of manufacturing bi-layered ferroelectric thin film
- 专利标题（中）： 制造双层铁电薄膜的方法
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申请号： US854173申请日： 1997-05-09
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公开(公告)号： US5932281A公开(公告)日： 1999-08-03
- 发明人: Yukoh Hochido, deceased , Hidekimi Kadokura , Masamichi Matsumoto , Koji Arita , Masamichi Azuma , Tatsuo Otsuki
- 申请人： Yukoh Hochido, deceased , Hidekimi Kadokura , Masamichi Matsumoto , Koji Arita , Masamichi Azuma , Tatsuo Otsuki
- 申请人地址： JPX Osaka JPX Saitama CO Colorado Springs
- 专利权人： Matsushita Electronics Corporation,Kojundo Chemical Laboratory Co., Ltd.,Symetrix Corporation
- 当前专利权人： Matsushita Electronics Corporation,Kojundo Chemical Laboratory Co., Ltd.,Symetrix Corporation
- 当前专利权人地址： JPX Osaka JPX Saitama CO Colorado Springs
- 优先权： JPX8-119350 19960514; JPX8-122014 19960516
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; C23C18/12 ; H01L21/02 ; H01L21/314 ; H01L21/316 ; B05D5/12 ; B05D3/12 ; C23C16/00
摘要：
A method of forming a Bi-layered ferroelectric thin film on a substrate with good reproducibility, using a mixed composition of a Bi-containing organic compound and a metal polyalkoxide compound by at least one technique selected from the group consisting of molecular deposition such as CVD, and spincoat-sintering.
公开/授权文献
- US4744577A Regenerative braking system for bicycles 公开/授权日：1988-05-17
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