发明授权
US5863822A Method of making non-volatile semiconductor memory devices having large
capacitance between floating and control gates
失效
制造在浮动栅极和控制栅极之间具有大电容的非易失性半导体存储器件的方法
- 专利标题： Method of making non-volatile semiconductor memory devices having large capacitance between floating and control gates
- 专利标题（中）： 制造在浮动栅极和控制栅极之间具有大电容的非易失性半导体存储器件的方法
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申请号： US796597申请日： 1997-02-07
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公开(公告)号： US5863822A公开(公告)日： 1999-01-26
- 发明人: Kohji Kanamori , Yosiaki Hisamune
- 申请人： Kohji Kanamori , Yosiaki Hisamune
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX5-301514 19931201
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247 ; H01L21/336 ; H01L29/423 ; H01L29/788 ; H01L29/792
摘要：
Disclosed herein is a stacked gate type non-volatile semiconductor memory cell including source/drain regions having a first portion covered with a tunnel oxide film and a second portion covered with an insulator film. The memory cell further includes a gate insulating film formed on a channel region, wherein the tunnel insulating film is thinner than the gate oxide film and the insulator film is thicker than the gate insulating film. A floating gate is formed on the respective insulating films and a control gate is formed over the floating gate with an intervention of a second gate insulating film.
公开/授权文献
- US5166633A Angle modulation dectector 公开/授权日：1992-11-24
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