Semiconductor device having input protective function

Invention Grant

US5747837A Semiconductor device having input protective function 失效

Title translation: 具有输入保护功能的半导体器件

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Patent Title: Semiconductor device having input protective function
Patent Title (中): 具有输入保护功能的半导体器件
Application No.: US763262

Application Date: 1996-12-10
Publication No.: US5747837A

Publication Date: 1998-05-05
Inventor: Akihiro Iwase , Tomio Nakano , Teruo Seki
Applicant: Akihiro Iwase , Tomio Nakano , Teruo Seki
Applicant Address: JPX Kanagawa
Assignee: Fujitsu Limited
Current Assignee: Fujitsu Limited
Current Assignee Address: JPX Kanagawa
Priority: JPX7-323006 19951212
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L27/02 ; H01L27/092 ; H01L27/06

Semiconductor device having input protective function

Abstract:

A semiconductor device with an expanded range of a recommended condition for an input voltage is disclosed. In embodiment, the semiconductor device having input protection on an input terminal thereto, includes: a semiconductor region having a first conducting type, first and second diffusion regions defined in the semiconductor region and respectively having a second conducting type, and a transistor formed by using the semiconductor region as a base, the first diffusion region as a collector, and the second diffusion region as an emitter. The first diffusion region is connected to one of a high-potential power supply and a low-potential power supply, the second diffusion region is connected to the input terminal, and the semiconductor region is connected to another power supply having a voltage high enough to reverse bias the junction between the semiconductor region and the first diffusion region.

Abstract(Chinese):

公开了一种具有扩展的输入电压推荐条件范围的半导体器件。在实施例中，在其输入端子上具有输入保护的半导体器件包括：具有限定在半导体区域中并且分别具有第二导电类型的第一导电类型，第一和第二扩散区域的半导体区域，以及通过使用作为基底的半导体区域，第一扩散区域作为集电极，第二扩散区域作为发射极。第一扩散区域连接到高电位电源和低电位电源中的一个，第二扩散区域连接到输入端子，并且半导体区域连接到具有足够高的电压的另一个电源，反向偏置半导体区域和第一扩散区域之间的结。

Public/Granted literature

US5165846A Substantially noiseless fan for cooling motors Public/Granted day:1992-11-24

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS