Invention Grant
- Patent Title: SOI substrate and method of producing the same
- Patent Title (中): SOI衬底及其制造方法
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Application No.: US403518Application Date: 1995-03-13
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Publication No.: US5658809APublication Date: 1997-08-19
- Inventor: Sadao Nakashima , Katsutoshi Izumi , Norihiko Ohwada , Tatsuhiko Katayama
- Applicant: Sadao Nakashima , Katsutoshi Izumi , Norihiko Ohwada , Tatsuhiko Katayama
- Applicant Address: JPX Kanagawa JPX Tokyo JPX Tokyo
- Assignee: Komatsu Electronic Metals Co., Ltd.,Nippon Telegraph and Telephone Corporation,NTT Electronics Technology Corporation
- Current Assignee: Komatsu Electronic Metals Co., Ltd.,Nippon Telegraph and Telephone Corporation,NTT Electronics Technology Corporation
- Current Assignee Address: JPX Kanagawa JPX Tokyo JPX Tokyo
- Priority: JPX6-076538 19940323
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/02 ; H01L21/265 ; H01L21/31 ; H01L21/762 ; H01L21/86 ; H01L27/00 ; H01L27/12
Abstract:
A method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate and practicing an anneal processing in an inert gas atmosphere at high temperatures to form the buried oxide layer. After the anneal processing in which the thickness of the buried oxide layer becomes a theoretical value in conformity with the thickness of the buried oxide layer formed by the implanted oxygen, the oxidation processing of the substrate is carried out in a high temperature oxygen atmosphere.
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