Invention Grant
- Patent Title: Semiconductor device including a band gap reference power supply device
- Patent Title (中): 包括带隙基准电源装置的半导体装置
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Application No.: US613939Application Date: 1996-03-13
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Publication No.: US5644159APublication Date: 1997-07-01
- Inventor: Masao Arimoto
- Applicant: Masao Arimoto
- Applicant Address: JPX Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JPX Tokyo
- Priority: JPX6-050534 19940322
- Main IPC: H01L27/04
- IPC: H01L27/04 ; G05F3/30 ; H01L21/822 ; H01L27/06 ; H01L27/082 ; H01L27/10
Abstract:
A semiconductor device implemented using a transistor (Q1) including at least one emitter (E1) and a transistor (Q2) which is larger than the transistor (Q1) including n emitters (E21 to E2n) each having the same area as the emitter (E1) of the transistor (Q1). The emitter (E1) of the transistor (Q1) is disposed between the emitters (E21 to E2n) of the transistor (Q2). When there is deflection of a substrate due to a stress to cause distortion in shape of the emitters, the emitter (E1) has much less distortion in shape than the emitters located on the end portions of the row region in the longitudinal direction. Since the transistor (Q2) has a number of emitters, the distortion in shape of the emitters (E21 to E2n) of the transistor (Q2), if any, has little effect on the whole.
Public/Granted literature
- US5053471A Transparent resin material Public/Granted day:1991-10-01
Information query
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