发明授权
- 专利标题： Method of manufacturing silicon substrate
- 专利标题（中）： 制造硅基板的方法
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申请号： US783147申请日： 1991-10-28
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公开(公告)号： US5449532A公开(公告)日： 1995-09-12
- 发明人: Fumitoshi Toyokawa
- 申请人： Fumitoshi Toyokawa
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX2-291174 19901029
- 主分类号： C23C16/02
- IPC分类号： C23C16/02 ; C23C16/24 ; C23C16/56 ; C30B33/00 ; H01L21/304 ; H01L21/322 ; B05D3/02
摘要：
A method of manufacturing a silicon single crystal substrate with the back surface thereof having deposited polycrystalline silicon. The method includes steps of depositing polycrystalline silicon on a coarsely polished silicon single crystal substrate, mirror surface finish polishing one substrate surface and carrying out a high temperature thermal treatment. The thermal treatment is carried out either prior or subsequent to the polycrystalline silicon deposition step. The thermal treatment has the effects of causing diffusion of interstitial oxygen Oi from the substrate surface to the outside and also causing contraction and vanishing of Oi precipitation nuclei in the substrate.
公开/授权文献
- US5808164A Process for producing aromatic sulfides 公开/授权日：1998-09-15
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