Invention Grant
- Patent Title: Semiconductor device and its manufacturing method
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US627922Application Date: 1990-12-17
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Publication No.: US5356830APublication Date: 1994-10-18
- Inventor: Susumu Yoshikawa , Shuichi Samata , Satoshi Maeda , Shizuo Sawada
- Applicant: Susumu Yoshikawa , Shuichi Samata , Satoshi Maeda , Shizuo Sawada
- Applicant Address: JPX Kawasaki
- Assignee: Kabushiki Kaisha Tobshiba
- Current Assignee: Kabushiki Kaisha Tobshiba
- Current Assignee Address: JPX Kawasaki
- Priority: JPX63-234317 19880919
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/205 ; H01L21/28 ; H01L21/285 ; H01L21/768 ; H01L29/43
Abstract:
A semiconductor device and its manufacturing method are provided in which an epitaxial silicon layer is formed by a selective epitaxial growth method over a semiconductor substrate and a polysilicon layer is formed by an ordinary deposition method on the epitaxial silicon layer and these layers and are formed over a semiconductor device in a continuous process within the same furnace for a CVD apparatus.
Public/Granted literature
- US5587623A Field emitter structure and method of making the same Public/Granted day:1996-12-24
Information query
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