Invention Grant
- Patent Title: Electron density storage device using a STM
- Patent Title (中): 电子密度存储器件使用STM
-
Application No.: US924709Application Date: 1992-08-04
-
Publication No.: US5216661APublication Date: 1993-06-01
- Inventor: Richard S. Potember , Shoji Yamaguchi , Carla A. Viands
- Applicant: Richard S. Potember , Shoji Yamaguchi , Carla A. Viands
- Applicant Address: MD Baltimore
- Assignee: The Johns Hopkins University
- Current Assignee: The Johns Hopkins University
- Current Assignee Address: MD Baltimore
- Main IPC: H01L49/00
- IPC: H01L49/00 ; G01Q60/14 ; G11B9/00 ; G11B9/14 ; G11C13/02 ; H01L51/05 ; H01L51/30
Abstract:
The invention is a method and device providing very high density information storage on an organomellic DCNQI charge transfer data storage medium. The medium is switched from one state to another through the application of an electric field to the medium by the probe tip of a scanning tunneling microscope resulting in an observable change in the electron density of the surface of the medium.
Public/Granted literature
- US5956368A Downlink channel handling within a spread spectrum communications system Public/Granted day:1999-09-21
Information query
IPC分类:
