发明授权
- 专利标题: Wet-tip die for EFG crystal growth apparatus
- 专利标题(中): 用于EFG晶体生长装置的湿尖模具
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申请号: US553903申请日: 1990-07-13
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公开(公告)号: US5037622A公开(公告)日: 1991-08-06
- 发明人: David S. Harvey , Dana L. Winchester , Brian H. Mackintosh , Sankerlingam Rajendran
- 申请人: David S. Harvey , Dana L. Winchester , Brian H. Mackintosh , Sankerlingam Rajendran
- 申请人地址: MA Billerica
- 专利权人: Mobil Solar Energy Corporation
- 当前专利权人: Mobil Solar Energy Corporation
- 当前专利权人地址: MA Billerica
- 主分类号: C30B15/34
- IPC分类号: C30B15/34 ; H01L21/208
摘要:
A novel capillary die and crystal growing method are provided for growing a hollow crystalline body by EFG. Inner and outer annular moats surround the die tip. Passageways are provided for supplying melt to those moats from a crucible, so that melt in said moats will wet and cover the inner and outer exterior surfaces of the die tip during growth of a hollow crystalline body. The novel die may be constructed so as to have a lower die tip and a shorter capillary than EFG dies heretofore used to successfully grow hollow bodies. The die design facilitates keeping the temperature of the die tip substantially uniform about its circumference, thereby improving the uniformity of thickness of the wall of the crystalline body grown from a film of melt on the die tip. The moats reduce the likelihood of the growth process being interrupted or adversely affected by flooding of the die. In the event the growth meniscus breaks, liquid silicon is captured in the moats, thereby preventing or reducing the likelihood of flooding of the die and associated growth apparatus.
公开/授权文献
- US5701042A Linear direct current motor 公开/授权日:1997-12-23
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