发明授权
US5021365A Compound semiconductor interface control using cationic ingredient oxide
to prevent fermi level pinning
失效
使用阳离子成分氧化物的化合物半导体界面控制以防止费米能级钉扎
- 专利标题： Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning
- 专利标题（中）： 使用阳离子成分氧化物的化合物半导体界面控制以防止费米能级钉扎
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申请号： US322583申请日： 1989-03-13
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公开(公告)号： US5021365A公开(公告)日： 1991-06-04
- 发明人: Peter D. Kirchner , Alan C. Warren , Jerry M. Woodall , Steven L. Wright
- 申请人： Peter D. Kirchner , Alan C. Warren , Jerry M. Woodall , Steven L. Wright
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/316 ; H01L29/45 ; H01L29/47 ; H01L29/51
摘要：
Control of the Fermi level pinning problem and the production of flat band surface performance in compound semiconductors is achieved by providing a cationic oxide free of anionic species on the surface of the semiconductor for flat band performance and with a localized inclusion of some anionic species for barrier performance so that oxide and metal work function responsiveness is available in structure and performance in MOSFET, MESFET and different work function metal FET structures. A cationic gallium oxide is produced on GaAs by oxide growth during illumination and while being rinsed with oxygenated water. The oxidation is used to produce both anionic and cationic species while the rinsing process selectively removes all the anionic species.
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