Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US148052Application Date: 1988-01-25
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Publication No.: US4864382APublication Date: 1989-09-05
- Inventor: Masaaki Aoki , Kazuo Yano , Toshiaki Masuhara
- Applicant: Masaaki Aoki , Kazuo Yano , Toshiaki Masuhara
- Applicant Address: JPX Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JPX Tokyo
- Priority: JPX62-18389 19870130
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/10 ; H01L29/167 ; H01L29/66
Abstract:
A MOS memory is formed in a semiconductor bulk, whereas a barrier semiconductor layer is disposed at the boundary between a MOS memory portion and the semiconductor bulk in order to reduce the effect of undesirable carriers excited by .alpha.-particles. The barrier semiconductor layer is designed to permit operation of the memory at low temperature while reducing the incidence of soft errors due to .alpha.-particles.
Public/Granted literature
- US6040838A Graphic state processing Public/Granted day:2000-03-21
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