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US4782413A Magnetoresistive sensor with mixed phase antiferromagnetic film 失效
具有混合相反铁磁膜的磁阻传感器

Magnetoresistive sensor with mixed phase antiferromagnetic film
摘要:
An improved thin film magnetoresistive (MR) sensor uses an iron-manganese (FeMn) alloy, with the alpha (body-centered-cubic) phase of FeMn present in the alloy, as an antiferromagnetic layer. The presence of alpha FeMn improves the longitudinal exchange bias in the ferromagnetic MR layer, especially when the amount of alpha FeMn exceeds the amount of gamma (face-centered-cubic) FeMn in the FeMn layer.
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