发明授权
- 专利标题: Magnetoresistive sensor with mixed phase antiferromagnetic film
- 专利标题(中): 具有混合相反铁磁膜的磁阻传感器
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申请号: US43674申请日: 1987-04-28
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公开(公告)号: US4782413A公开(公告)日: 1988-11-01
- 发明人: James K. Howard , Ting C. Huang
- 申请人: James K. Howard , Ting C. Huang
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: G01R33/09
- IPC分类号: G01R33/09 ; G11B5/39 ; H01L43/08 ; H01L43/10 ; G11B5/12 ; G11B5/30
摘要:
An improved thin film magnetoresistive (MR) sensor uses an iron-manganese (FeMn) alloy, with the alpha (body-centered-cubic) phase of FeMn present in the alloy, as an antiferromagnetic layer. The presence of alpha FeMn improves the longitudinal exchange bias in the ferromagnetic MR layer, especially when the amount of alpha FeMn exceeds the amount of gamma (face-centered-cubic) FeMn in the FeMn layer.
公开/授权文献
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