Invention Grant
US4757025A Method of making gate turn off switch with anode short and buried base
失效
具有阳极短路和埋地的闸极关闭开关的方法
- Patent Title: Method of making gate turn off switch with anode short and buried base
- Patent Title (中): 具有阳极短路和埋地的闸极关闭开关的方法
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Application No.: US936919Application Date: 1986-11-28
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Publication No.: US4757025APublication Date: 1988-07-12
- Inventor: John R. Bender
- Applicant: John R. Bender
- Applicant Address: IL Schaumburg
- Assignee: Motorola Inc.
- Current Assignee: Motorola Inc.
- Current Assignee Address: IL Schaumburg
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/10 ; H01L29/744 ; H01L21/38 ; H01L21/441
Abstract:
A GTO switch is provided in which the upper base layer (gate) is formed by a diffusion step. An epitaxial layer grown over the upper base layer contains cathode and gate diffusions which are separated by an undiffused gap. This "buried base" technique provides precise control over the resistivity of the base. The cathode-gate gap provides increased reverse gate voltage capacity. Other features include a large anode short area and a double-layer-metal; contact structure on the cathode-gate surface.
Public/Granted literature
- US5895948A Semiconductor device and fabrication process thereof Public/Granted day:1999-04-20
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