发明授权
- 专利标题: Semiconductor flow velocity sensor
- 专利标题(中): 半导体流速传感器
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申请号: US820703申请日: 1986-01-21
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公开(公告)号: US4680963A公开(公告)日: 1987-07-21
- 发明人: Osamu Tabata , Hazime Inagaki , Tomoyuki Kitano
- 申请人: Osamu Tabata , Hazime Inagaki , Tomoyuki Kitano
- 申请人地址: JPX Aichi
- 专利权人: Kabushiki Kaisha Toyota Chuo Kenkyusho
- 当前专利权人: Kabushiki Kaisha Toyota Chuo Kenkyusho
- 当前专利权人地址: JPX Aichi
- 优先权: JPX60-12064 19850124
- 主分类号: G01F1/68
- IPC分类号: G01F1/68 ; G01F1/684 ; G01F1/692 ; G01F15/04 ; G01P5/12
摘要:
A semiconductor flow velocity sensor having a semiconductor substrate and an electrical heating unit arranged on the substrate. The sensor located in the fluid flow to be measured can electrically detect the radiation from the heating unit which varies depending on the velocity of fluid flow. Thermal insulator is provided between the semiconductor (silicon) substrate and the heating unit so as to thermally shield the substrate from the heating unit. On the thermally isolated area of the substrate is provided an external sensor circuit so as to enable to increase the integration of the sensor.
公开/授权文献
- US4117796A Double sectioned tank 公开/授权日:1978-10-03
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