发明授权
- 专利标题： High-pressure, high-temperature gaseous chemical method for silicon oxidation
- 专利标题（中）： 用于硅氧化的高压，高温气体化学方法
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申请号： US24989申请日： 1979-03-29
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公开(公告)号： US4268538A公开(公告)日： 1981-05-19
- 发明人: Monte M. Toole , Raphael Klein
- 申请人： Monte M. Toole , Raphael Klein
- 申请人地址： CA Mountain View
- 专利权人： Atomel Corporation
- 当前专利权人： Atomel Corporation
- 当前专利权人地址： CA Mountain View
- 主分类号： C30B33/00
- IPC分类号： C30B33/00 ; H01L21/316
摘要：
Apparatus and method for growing oxide on silicon wafers or silicon-coated wafers or other semiconductors for the semiconductor industry wherein the oxide growth is produced under high pressure and high temperature conditions within a reaction chamber by oxidizing gases which are maintained in a continuous flow condition into and through the chamber.
公开/授权文献
- US5974776A Chopper for harvesting machine 公开/授权日：1999-11-02
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