Invention Grant
US4050979A Process for thinning silicon with special application to producing
silicon on insulator
失效
用于减薄硅的工艺，专门用于生产绝缘体上的硅
- Patent Title: Process for thinning silicon with special application to producing silicon on insulator
- Patent Title (中): 用于减薄硅的工艺，专门用于生产绝缘体上的硅
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Application No.: US649130Application Date: 1976-01-14
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Publication No.: US4050979APublication Date: 1977-09-27
- Inventor: Ronald K. Smeltzer , Kenneth E. Bean
- Applicant: Ronald K. Smeltzer , Kenneth E. Bean
- Applicant Address: TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: TX Dallas
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/762
Abstract:
This disclosure relates to methods of producing thin layers of silicon as well as thin layers of silicon on insulating substrates such as silicon dioxide or polycrystalline silicon by forming either an n- layer of single crystal silicon over a p++ layer of single crystal silicon or a p- layer of single crystal silicon over an n++ layer of single crystal silicon and then removing either the n++ or p++ single crystal substrate, as the case may be, by utilizing an etch which will only etch the n++ or p++ region and will stop when the n- or p- region, as the case may be, has been reached.
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