Invention Grant
- Patent Title: Utilization of an arsenic diffused emitter in the fabrication of a high performance semiconductor device
- Patent Title (中): 在制造高性能半导体器件中利用砷扩散发射极
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Application No.: US638496Application Date: 1975-12-08
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Publication No.: US4049478APublication Date: 1977-09-20
- Inventor: Hitendra N. Ghosh , Madhukar L. Joshi , Tsu-Hsing Yeh
- Applicant: Hitendra N. Ghosh , Madhukar L. Joshi , Tsu-Hsing Yeh
- Applicant Address: NY Armonk
- Assignee: IBM Corporation
- Current Assignee: IBM Corporation
- Current Assignee Address: NY Armonk
- Main IPC: H01L21/22
- IPC: H01L21/22 ; H01L21/223 ; H01L29/08 ; H01L21/20
Abstract:
A substantially square N-type impurity distribution profile in a silicon substrate produces much superior dc and ac characteristics in PN junction devices than can be expected from the usual phosphorus distribution profile. Such a square profile is obtained by diffusion of arsenic in the silicon substrate. The sharper impurity gradient allows a relatively low surface concentration to be used for the device. This lower surface concentration relieves precipitation and dislocation problems.
Public/Granted literature
- US5782444A Cabinet skate Public/Granted day:1998-07-21
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