Invention Grant
- Patent Title: Stress sensor apparatus
- Patent Title (中): 应力传感器装置
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Application No.: US727733Application Date: 1976-09-29
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Publication No.: US4035823APublication Date: 1977-07-12
- Inventor: James F. Marshall
- Applicant: James F. Marshall
- Applicant Address: MN Minneapolis
- Assignee: Honeywell Inc.
- Current Assignee: Honeywell Inc.
- Current Assignee Address: MN Minneapolis
- Main IPC: G01L9/00
- IPC: G01L9/00 ; H01L29/84 ; H04R23/00 ; B01J17/00 ; H01L5/00 ; H01L29/96
Abstract:
Semiconductor material stress sensors are provided where the sensing resistors therein have good electrical stability while being sufficiently protected without degrading sensor performance. This is accomplished through control of the locations of the maximum concentrations of the resistor dopant.
Public/Granted literature
- US5907535A Disk cartridge with positioning hole Public/Granted day:1999-05-25
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