Invention Grant
- Patent Title: Process of producing semiconductor devices
- Patent Title (中): 制造半导体器件的工艺
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Application No.: US467563Application Date: 1974-05-06
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Publication No.: US3972113APublication Date: 1976-08-03
- Inventor: Josuke Nakata , Takeshi Yamamoto , Hitoshi Matufuzi
- Applicant: Josuke Nakata , Takeshi Yamamoto , Hitoshi Matufuzi
- Applicant Address: JA Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JA Tokyo
- Priority: JA48-53421 19730514; JA49-24547 19740228
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/223 ; H01L21/78 ; B01J17/00
Abstract:
Boron is diffused into selected areas of each main face of an N silicon substrate and gallium is diffused into the entire main face to form a P-N junction including deeper portions alternating shallower portion. Selective etching is effected to form grooves in the shallower junction portions for dividing the P-N junction. Both main faces of the substrate except for the grooves are metallized and a passivation layer is applied to each groove. Alternatively, in order to form the P-N junction as above described, gallium is selectively diffused in the substrate followed by a further diffusion of the gallium.
Public/Granted literature
- US5905947A Electronic audio system capable of communicating data signals over wireless networks Public/Granted day:1999-05-18
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