Invention Application
- Patent Title: Remote Plasma Source and Plasma Processing Chamber Having Same
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Application No.: US18214745Application Date: 2023-06-27
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Publication No.: US20250006465A1Publication Date: 2025-01-02
- Inventor: Yang YANG , Kartik RAMASWAMY , Fernando SILVEIRA , Imad YOUSIF
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
Methods and apparatus for a point of use remote plasma source are provided. In embodiments, a remote plasma apparatus includes: an enclosure surrounding a cavity; a first conductor surrounding a first portion of the enclosure; a second conductor surrounding a second portion of the enclosure, wherein the first portion of the enclosure and the second portion of the enclosure overlap by an overlap amount, and wherein each of the first conductor and the second conductor are circumferentially discontinuous; a dielectric layer disposed between and separating the first conductor and the second conductor; a gas inlet configured to flow a gas into the cavity; and a gas outlet disposed in a bottom of the enclosure and configured to flow the gas out of the cavity.
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