A lithography system for extreme ultraviolet (EUV) radiation includes a housing (25) with an interior (24) containing a residual gas (27), and at least one gas-binding component (29) which is arranged in the interior (24) and has a gas-binding material for binding contaminating substances (28). The gas-binding component (29) has at least one flow duct (33) having at least one surface with the gas-binding material, with a gas flow of the residual gas (27) in the flow duct (33) having a Knudsen number of between 0.01 and 5, preferably between 0.01 and 0.5, in particular between 0.01 and 0.3, and with a casing (26) which encapsulates a beam path of the EUV lithography system (1) being arranged in the interior (24) of the housing (25). The casing (26) preferably has an opening (37) with a maintenance shaft (36) in which the gas-binding component (29) is arranged.