- 专利标题： Buried Grid Double Junction Barrier Schottky Diode and Method of Making
-
申请号： US18303617申请日： 2023-04-20
-
公开(公告)号： US20240355938A1公开(公告)日： 2024-10-24
- 发明人: Shuoben Hou , Sergey Reshanov , Adolf Schöner
- 申请人： II-VI Delaware, Inc.
- 申请人地址： US DE Wilmington
- 专利权人： II-VI Delaware, Inc.
- 当前专利权人： II-VI Delaware, Inc.
- 当前专利权人地址： US DE Wilmington
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L29/417 ; H01L29/66
摘要：
A buried grid double junction barrier Schottky diode may include a drift layer, a grid layer comprising a plurality of grid segments at least partially in the drift layer, a regrown layer on the grid layer and the drift layer, and first and second Schottky material layers. The grid segments may define at least one grid spacing area between adjacent grid segments. The first Schottky material layer may be at least partially on the regrown layer and may at least partially overlap the grid segments of the grid layer. The second Schottky material layer may be at least partially on the regrown layer and may at least partially overlap the grid spacing area(s). The second Schottky material layer may have a different Schottky barrier height than the first Schottky material layer. A method of making a buried grid double junction barrier Schottky diode is also disclosed.
信息查询
IPC分类:
