发明公开
- 专利标题: MEMORY SPRINTING
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申请号: US18129390申请日: 2023-03-31
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公开(公告)号: US20240329846A1公开(公告)日: 2024-10-03
- 发明人: Vignesh Adhinarayanan , Michael Ignatowski , Hyung-Dong Lee
- 申请人: Advanced Micro Devices, Inc.
- 申请人地址: US CA Santa Clara
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: G06F3/06
- IPC分类号: G06F3/06
摘要:
A memory sprint controller, responsive to an indicator of an irregular memory access phase, causes a memory controller to enter a sprint mode in which it temporarily adjusts at least one timing parameter of a dynamic random access memory (DRAM) to reduce a time in which a designated number of activate (ACT) commands are allowed to be dispatched to the DRAM.
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