- 专利标题: SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
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申请号: US18399335申请日: 2023-12-28
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公开(公告)号: US20240290715A1公开(公告)日: 2024-08-29
- 发明人: Yasuhiko MAKI
- 申请人: Socionext Inc.
- 申请人地址: JP Kanagawa
- 专利权人: Socionext Inc.
- 当前专利权人: Socionext Inc.
- 当前专利权人地址: JP Kanagawa
- 主分类号: H01L23/528
- IPC分类号: H01L23/528 ; H01L23/522 ; H01L25/065
摘要:
In a semiconductor integrated circuit device, a first semiconductor chip includes: a buried power rail that supplies first power; and a power line that is provided in a layer above the buried power rail and supplies second power. The buried power rail receives supply of the first power from the back face of the first semiconductor chip via a first through electrode, and the power line receives supply of the second power from the back face of the first semiconductor chip via a second through electrode. The cross-sectional area of the second through electrode is greater than the cross-sectional area of the first through electrode.
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