发明公开
- 专利标题： MEMORY STRUCTURES HAVING A SINGLE ACCESS TRANSISTOR FOR MULTIPLE MEMORY DEVICES
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申请号： US18112020申请日： 2023-02-21
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公开(公告)号： US20240284687A1公开(公告)日： 2024-08-22
- 发明人: Min Gyu Sung , Julien Frougier , Ruilong Xie , Chanro Park , Juntao Li
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H10B99/00
- IPC分类号： H10B99/00
摘要：
A semiconductor structure includes an access transistor, a first memory device connected to a first side of the access transistor, and a second memory device connected to a second side of the access transistor. In some embodiments, the first memory device is connected to a first end of a first source/drain region of the access transistor and the second memory device is connected to a second end of the first source/drain region of the access transistor. In other embodiments, the first memory device is connected to a first source/drain region of the access transistor and the second memory device is connected to a second source/drain region of the access transistor.
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