- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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申请号： US18611729申请日： 2024-03-21
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公开(公告)号： US20240237554A1公开(公告)日： 2024-07-11
- 发明人: Hung-Chan Lin , Yu-Ping Wang , Chien-Ting Lin
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu City
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu City
- 优先权： CN 2111067661.2 2021.09.13
- 主分类号： H10N52/01
- IPC分类号： H10N52/01 ; H10B61/00 ; H10N52/00 ; H10N52/80
摘要：
A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spin orbit torque (SOT) layer on the MTJ, a spacer adjacent to the MTJ and the first SOT layer, and a second SOT layer on the first SOT layer. Preferably, the first SOT layer and the second SOT layer are made of same material.
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