Methods, systems, and devices for word line charge integration are described. In some examples, a memory device may include a plurality of memory cells that are coupled with a word line and respective digit lines. During a read operation, the word line may be activated (e.g., driven to a voltage) and a subset of the respective digit lines may be activated (e.g., driven to a voltage) to begin integrating charges of each of the memory cells. Before each digit line is activated, the word line may be deactivated and the remaining digit lines may be activated (e.g., driven to a voltage) to begin integrating charges of the remaining memory cells that are coupled with the word line. After each of the digit lines are selected, respective sense components may be activated to sense the charges associated with the memory cells.